Bond Line Thickness Characterization for QFN Package Robustness
Bryan Christian S. Bacquian, Edwin M. Graycochea Jr, Frederick Ray I. Gomez, Rennier S. Rodriguez
Journal of Engineering Research and Reports · pp. 15–19 · Published 6 Jul 2020
10.9734/jerr/2020/v14i217119Abstract
The paper focused on the evaluation of quad-flat no-leads (QFN) semiconductor package with small silicon die on different machine platforms to achieve a higher bond line thickness (BLT) of greater than 30 µm. The characterization or evaluation was narrowed down into two main diebonding machines with the objective of attaining a higher BLT for small die. High BLT capability is desired to generate clearance for the shrinkage of the glue, henceforth mitigating the glue voids. Diebond Machine 2 was able to achieve the target BLT with 30.89 µm average compared to 18.25 µm for Machine 1. Moreover, the target BLT range could only be achieved in Machine 2 only. For future works, the machine and configuration could be used for devices with comparable requirement.
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Cited by 10
Jerome J. Dinglasan · Journal of Engineering Research and Reports · 2022
Alyssa Grace Gablan, Jerome Dinglasan, Frederick Ray Gomez · Journal of Engineering Research and Reports · 2021
Rennier Rodriguez, Edwin Graycochea Jr., Frederick Ray Gomez · Journal of Engineering Research and Reports · 2021
E. Graycochea Jr., R. Rodriguez, F. R. Gomez · Journal of Engineering Research and Reports · 2021
Salvador C. Buenviaje, Rennier S. Rodriguez, Rammil A. Seguido · 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC) · 2020
Showing 5 of 10 known citations — external sources report more than can currently be individually listed.
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