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Research Article Open access CC BY 4.0

Bond Line Thickness Characterization for QFN Package Robustness

Bryan Christian S. Bacquian, Edwin M. Graycochea Jr, Frederick Ray I. Gomez, Rennier S. Rodriguez

Journal of Engineering Research and Reports · pp. 15–19 · Published 6 Jul 2020

10.9734/jerr/2020/v14i217119

Abstract

The paper focused on the evaluation of quad-flat no-leads (QFN) semiconductor package with small silicon die on different machine platforms to achieve a higher bond line thickness (BLT) of greater than 30 µm. The characterization or evaluation was narrowed down into two main diebonding machines with the objective of attaining a higher BLT for small die. High BLT capability is desired to generate clearance for the shrinkage of the glue, henceforth mitigating the glue voids. Diebond Machine 2 was able to achieve the target BLT with 30.89 µm average compared to 18.25 µm for Machine 1. Moreover, the target BLT range could only be achieved in Machine 2 only. For future works, the machine and configuration could be used for devices with comparable requirement.

QFN diebond process glue BLT

Cited by 1

Process Optimization Study on Leadframe Surface Enhancements for Delamination Mitigation

Salvador C. Buenviaje, Rennier S. Rodriguez, Rammil A. Seguido · 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC) · 2020

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