Design of Common-Source/Drain Active Balun Using 90nm CMOS Technology
Frederick Ray I. Gomez, Maria Theresa G. De Leon, John Richard E. Hizon
Journal of Engineering Research and Reports · pp. 1–9 · Published 19 Apr 2019
10.9734/jerr/2019/v4i316906Abstract
This research paper presents a design and study of a common-source/drain active balun circuit implemented in a standard 90-nm complementary metal-oxide semiconductor (CMOS) technology. The active balun design is intended for worldwide interoperability for microwave access (WiMAX) application, with operating frequency of 5.8GHz and supply voltage of 1V. Measurements are taken for parameters namely gain difference, phase difference, and noise figure. The common-source active balun design achieved a minimal gain difference of 0.016dB, phase difference of 180° ± 7.1°, and noise figure of 7.42-9.85dB, which are comparable to past active balun designs and researches. The design eventually achieved a low power consumption of 2.56mW.
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