Study on the Flexoelectricity of BST Film Multilayer Structure

Abstract

Single layer and bilayer Y3+-doped Ba0.65Sr0.35TiO3 (BST) thin-film cantilever beam, of which the single BST film thickness is 500 nm, was prepared on a composite silicon substrate. The flexoelectric coefficients of both types of BSTs were measured using a low frequency vibration method. The flexoelectric coefficient of the bilayer BST film multilayer structure is 1.66 μC/m, which doubles the effective flexoelectric coefficient comparing to the single layer BST. In addition, we discussed the effective piezoelectric coefficient of the BST film multilayer structure, which can reach as much as 2.08×10-10C/N due to the scaling effect.