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Research Article Open access CC BY 4.0

Preparation and Physical Properties of CuxZn1-xS Thin Films Deposited by Metal Organic Chemical Vapour Deposition Technique

Joseph Onyeka Emegha, Bolutife Olofinjana, Marcus Adebola Eleruja, Ochuko-Oghene Efe, Samuel Ogochukwu Azi

Journal of Materials Science Research and Reviews · pp. 152–160 · Published 18 Jan 2019

10.9734/jmsrr/2019/v2i21

Abstract

Copper Zinc Sulphide (CuxZn1-xS) thin films were prepared and deposited using metal organic chemical vapour deposition (MOCVD) technique. The films were studied using Rutherford backscattering (RBS) spectroscopy for elemental composition and thickness, X-ray diffraction (XRD) for crystallographic structure, Scanning electron microscopy (SEM) for surface morphology and Ultraviolet-Visible spectroscopy analysis for optical characterization. Experimental results showed that all the films were polycrystalline with good adherent with the substrate. The direct optical band gap changes from 2.20 eV to 3.42 eV for different values of x with an average transmittance of above 80%. SEM analysis showed that the deposited films are dense in nature with well defined grains of different sizes. The study demonstrates that the properties of the deposited films were strongly influenced by the copper / zinc concentrations in CuxZn1-xS matrix.

Dithiocarbamate MOCVD precursor thin films RBS

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Cited by 11

Effect of Deposition Temperature on the Properties of Copper-Zinc Sulphide Thin Films using Mixed Copper and Zinc Dithiocarbamate Precursors

Joseph Emegha, Kingsley Ukhurebor, Uyiosa Aigbe · Gazi University Journal of Science · 2022

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

F O Efe, B Olofinjana, O Fasakin · Physica Scripta · 2023

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