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Research Article Open access CC BY 4.0

Impurity Bands and Density of State in Doped Silicate Glasses with Metal Oxides (RuO2, CuO, MnO2)

G. Abdurakhmanov, A. Dekhkanov, M. Tursunov, D. Tashmukhamedova

Physical Science International Journal · pp. 5–15 · Published 21 Nov 2023

10.9734/psij/2023/v27i6806

Abstract

In this article, as a result of double alloying with ruthenium, copper, manganese oxides, the formation of an impurity band in silicate glass and how the density of electron states changes in it was studied by hypothetical and tunneling microprobe spectroscopy. The results of the experiment were processed using Wolfram Mathematica 11 software. It was found that around room temperature, the impurity band touches or merges with the valence band of the glass. At a high temperature (around 1000 K), the impurity band separates from the valence band of the glass, and a pseudo-gap appears between them. As a result, doped silicate glass exhibits metallic conductivity at room temperature, but at high temperatures, it has semiconductor (activation) conductivity.

Pseudo-gap thick film resistors ligature atoms impurity zone electrical conductivity tunneling spectroscopy thermopower coefficient insulator-metal metal-insulator transitions.

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