Effect of Indium on Bond Distribution, Cohesive Energy, Heat of Atomization and Electro Negativity in Se98-xCd2Inx (0≤x≤10) and Se75Te15-xCd10Inx (0≤x≤15) Chalcogenide Glasses

Abstract

This review paper related to the effect of indium (In) on the bond distribution, cohesive energy (CE), average heat of atomization (Hs) and average electro negativity χave of chemically modified chalcogenide glasses belonging to the study of physical parameters of Se98-xCd2Inx (0≤x≤10) chalcogenide glasses and Se75Te15-xCd10Inx (0≤x≤15) systems. The bonding betweens Se98-xCd2Inx (0≤x≤10) (SCI system) and Se75Te15-xCd10Inx (0≤x≤15) (STCI system) glassy alloys were evaluated with the chemical bond approach (CBA), where the involvement of heteropolar and homopolar bonds was calculated based on coordination and stoichiometric constraints of glassy alloys. The cohesive energy (CE) and average heat of atomization (Hs) were calculated by adding the biased bond dissociation energies of the constituent bonds. The results tell that increasing indium content appreciably modifies the bond distribution by increasing the arrangement of heteropolar bonds such as In–Se and In–Te in place of Se–Se and Te–Te homopolar bonds. Increasing In compositions show improved network connectivity due to increased cross-linking, which influences the overall stability of the glass network. The cohesive energy for SCI and STCI network systems are increases with increasing indium concentrations. The heat of atomization is almost constant for SCI but increases for STCI with indium concentration. This can be explaining by formation chemical bond between elements.