Raman Effect Studies of Electrochemical Synthesized Quartz Crystal of Poly-O-Phenylenediamine for Piezoelectric Application

Abstract

Microelectronics arose from the desire for miniaturization of electrical devices, while Nano-electronics arose from subsequent study. Researchers have developed and modeled energy harvesting technologies based on the conservation law of energy over the last two decades to produce an alternative power source for small size electronics (nano-electronics) and low power electronic devices that can replace traditional power sources like batteries. The ambient energy, which is typically in the form of solar, thermal, vibrational, and other types, can be converted into a variety of different forms. Electrical energy can be harvested from vibrational energy in materials and other man-made materials using piezoelectric, electromagnetic, electrostatic, and nano-electric generators. Poly-o-phenylenediamine (PoPD) Quartz (silicon dioxide) Crystals were electrochemically produced at varied percentage ratios of silicon dioxide and Poly-O-Phenylenediamine samples in this study (sample A represents 20:80 percent, sample B with 50:50 percent, and sample C has 60:40 percent respectively). The Raman Effect and Scanning Electron Microscopic (SEM) analysis were used to characterize the material and forecast its Piezoelectric effect. All of the samples have their maximum peak record at Raman shift of 2872cm-1, however the Raman intensity varies. Sample A produced a peak intensity of 1250, Sample B produced a peak intensity of 1700, and Sample C produced a peak intensity of 2700. As the doping concentration of silicon dioxide increases, the Raman peak intensity for Poly-o-Phenylenediamine doped with silicon dioxide increases. The SEM images show that Sample A forms a fine cluster with little or no distinctive morphology, Sample B is ball-shaped with grain-like structure, and Sample C shows a flat, thin leaf-like shape. From sample A to C, the intra-particle separation rises, which corresponds to an increase in SiO2 concentration.