Pallavi Chauhan

A Robust 11T SRAM Cell with Improved SNM in 22nm Technology

Urwashi Singh, Abhishek Tomar, Pallavi Chauhan, Prachi Mishra & K. K. Sharma · Advances in Research · 2026

This paper presents a FinFET-based 11-transistor static random-access memory cell designed and evaluated at the 22 nm technology node. The proposed SRAM cell is intended to improve static noise margin while maintaining acceptable power consumption and access time under low-voltag...