Thermal Performance of High Power LED on Boron Doped Aluminium Nitride Thin Film Coated Copper Substrates
Zeng Yin Ong, Subramani Shanmugan, Devarajan Mutharasu
Journal of Scientific Research and Reports · pp. 109–119 · Published 15 Dec 2014
10.9734/JSRR/2015/14232Abstract
Aims: The paper is aim to study the thermal performance of Boron doped Aluminium Nitride (B-AlN) thin film coated over Copper (Cu) substrate to improve surface configuration of the interface between two materials with different synthesis parameters. Study Design: Synthesis of Boron doped AlN thin film by sputtering and post processed for various temperatures. The processed samples were characterized to study the behavior of B doping as well as the annealing temperature in changing the properties of B doped AlN thin film. The structural and surface properties were studied and reported. Place and Duration of Study: Nano Optoelectronic Research Laboratory, School of Physics, University Sains Malaysia, Penang 11800, Malaysia, between December 2013 and July 2014. Methodology: B-AlN thin films were prepared with five different gas ratios over Cu substrates by DC-RF coupled sputtering method and suggested for thin film based thermal interface material (TIM). 3W green LED package was tested with B-AlN thin films coated Cu substrates through thermal transient and surface analysis. The results are compared with the performance of bare Cu substrates. Results: The thin film prepared with gas ratio of Ar 7: N2 13 coated at 200°C showed the lowest thermal resistance Rth (53.27 K/W), board to ambient thermal resistance RthB-A (36.03 K/W) and the lowest junction temperature Tj(120.98°C) at higher driving current (700 mA). Surface analysis results show that the thin film mentioned above exhibits low in surface roughness (8 nm) and range of valley depth (30-80 nm), which contribute in thermal performance of LED. Conclusion: Overall, B-AlN films coated with gas ratio of Ar 7: N2 13 are more favorable in reducing both total thermal resistance and junction temperature (Tj) of LED.
Cited by 18
Shanmugan Subramani, Mutharasu Devarajan · IEEE Transactions on Electron Devices · 2016
Nur Jassriatul Aida Jamaludin, Shanmugan Subramani, Mutharasu Devarajan · Optical and Quantum Electronics · 2015
Anas A. Ahmed, Mutharasu Devarajan, Muna E. Raypah · Surface and Coatings Technology · 2018
Faruk Aydın, İsmail Kıyak, Aslı Spor · Materials Science in Semiconductor Processing · 2026
Abdulkarim Hamza El-ladan, Shanmugan Subramani · Applied Physics A · 2021
Muhammad Sani Idris, Shanmugan Subramani · Optical and Quantum Electronics · 2020
Shanmugan Subramani, Mutharasu Devarajan · Microelectronics International · 2023
Muhammad Sani Idris, Subramani Shanmugan · Materials Chemistry and Physics · 2022
Khalid Bashir, Dheeraj Gupta, Vivek Jain · Materials Characterization · 2025
M Ahmadein, Omayma A El-Kady, M M Mohammed · Materials Research Express · 2021
Related research
Article metrics
Real usage data collected on this platform.
0
Page views
0
PDF downloads
0
Outbound clicks
18
Citations
Views by country
Approximate, from request IP at view time — not citizenship or institution. Countries with fewer than 5 views are grouped as "Other".
No views recorded yet.
Traffic sources
Referring site, by host.
No traffic recorded yet.
Views and downloads exclude known bots/crawlers. Citations combines this platform's own DOI-resolved index with each external source's own reported total — see Cited by above for individually listed citing works. Last refreshed 0 seconds ago.