Determination of S-parameter for Unimplanted and Ion-implanted 3C-SiC and 6H-SiC Using Diffusion Trapping Model
V. Rathore, M. K. Rathore & S. B. Shrivastava · Physical Science International Journal · 2015
The mechanism of slow positrons has been discussed in terms of diffusion of positrons at the surface of SiC and trapping in to as-grown and irradiation induced defects. The one dimensional diffusion equation has been solved and the rate equations have been set up to describe the...
Open access
Research Article
10.9734/PSIJ/2015/18362