Magnetoresistance Recovery in the Amorphous Dielectric Material SiCOH
Philip A. Williams & James R. Lloyd · Physical Science International Journal · 2021
The use of a magnetoresistance in the characterization of transport properties in the amorphous low-k dielectric material SiCOH is demonstrated. The double occupancy of charge carriers in trap states within the dielectric material can only exist in spin singlet formation due to P...
Open access
Research Article
10.9734/psij/2021/v25i330245