Characterisation of Defects Induced by Ion-implantation Processing of P+N Shallow Junction Devices
D. Dube, I. Hapazari & J. Zvidzayi · Physical Science International Journal · 2016
The DLTS technique was used to characterise defects induced by ion-implantation processing in P+N shallow junction devices. BF2 implantation was carried out on silicon diodes pre-armophized by Ge at different energies. The variation of implantation energy and its effects on the t...
Open access
Research Article
10.9734/PSIJ/2016/24297