Modeling and Simulation of High Blocking Voltage in 4H Silicon Carbide Bipolar Junction Transistors
Hamid Fardi · Physical Science International Journal · 2015
For a given breakdown voltage, the drift region thickness and doping concentration of punch-through structure can be optimized to give the lowest specific on-resistance. An optimization scheme performed for a breakdown voltage of 14 kV in 4H-SiC bipolar junction transistor (BJT)...
Open access
Research Article
10.9734/PSIJ/2015/17567